Phosphorus diffusion gettering process of multicrystalline silicon using a sacrificial porous silicon layer
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Phosphorus diffusion gettering process of multicrystalline silicon using a sacrificial porous silicon layer
The aims of this work are to getter undesirable impurities from low-cost multicrystalline silicon (mc-Si) wafers and then enhance their electronic properties. We used an efficient process which consists of applying phosphorus diffusion into a sacrificial porous silicon (PS) layer in which the gettered impurities have been trapped after the heat treatment. As we have expected, after removing the...
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The efficacy of higher-temperature gettering processes in reducing precipitated iron concentrations is assessed by synchrotron-based micro-X-ray fluorescence. By measuring the same grain boundary before and after phosphorus diffusion in a set of wafers from adjacent ingot heights, the reduction in size of individual precipitates is measured as a function of gettering temperature in samples from...
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All material supplied via Aaltodoc is protected by copyright and other intellectual property rights, and duplication or sale of all or part of any of the repository collections is not permitted, except that material may be duplicated by you for your research use or educational purposes in electronic or print form. You must obtain permission for any other use. Electronic or print copies may not ...
متن کاملResponse to Phosphorus Gettering of Different Regions of Cast Multicrystalline Silicon Ingots
Minority carrier lifetimes were measured to determine the effect of phosphorus gettering on cast multicrystalline silicon substrates from central and end regions of two different ingots. One ingot exhibited visibly inferior crystallographic structure, and consistently showed lower lifetimes. For the low quality ingot, wafers from the bottom region did not respond to gettering, whilst those from...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2012
ISSN: 1556-276X
DOI: 10.1186/1556-276x-7-424